tm october fdp19n40 / fdpf19n4 0 n-channel mosfet ?2008 fairchild semiconductor corporation fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 1 unifet tm fdp19n40 / FDPF19N40 n-channel mosfet 400v, 19a, 0.24 features ?r ds(on) =0.2 ( typ.)@ v gs = 10v, i d = 9.5a ? low gate charge ( typ. 32nc) ? low c rss ( typ. 20pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high en ergy pluse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power suppliesand active power factor correction. d g s to-220f fdpf series g s d to-220 fdp series g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp19n40 FDPF19N40 units v dss drain to source voltage 400 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 19 19* a -continuous (t c = 100 o c) 11.4 11.4* i dm drain current - pulsed (note 1) 76 76* a e as single pulsed avalanche energy (note 2) 542 mj i ar avalanche current (note 1) 19 a e ar repetitive avalanche energy (note 1) 21.5 mj dv/dt peak diode recovery dv/dt (note 3) 15 v/ns p d power dissipation (t c = 25 o c) 215 40 w - derate above 25 o c 1.65 0.3 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp19n40 FDPF19N40 units r jc thermal resistance, junction to case 0.6 3.0 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp19n40 fdp19n40 to-220 - - 50 FDPF19N40 FDPF19N40 to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 400 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 400v, v gs = 0v - - 1 a v ds = 320v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 9.5a - 0.2 0.24 g fs forward transconductance v ds = 20v, i d = 9.5a (note 4) - 18.3 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1590 2115 pf c oss output capacitance - 255 340 pf c rss reverse transfer capacitance - 20 29 pf q g(tot) total gate charge at 10v v ds = 320v, i d = 19a v gs = 10v (note 4, 5) -3240nc q gs gate to source gate charge - 10 - nc q gd gate to drain ?miller? charge - 13 - nc t d(on) turn-on delay time v dd = 200v, i d = 19a r g = 25 (note 4, 5) -3172ns t r turn-on rise time - 70 150 ns t d(off) turn-off delay time - 82 174 ns t f turn-off fall time - 49 108 ns i s maximum continuous drain to source diode forward current - - 19 a i sm maximum pulsed drain to source diode forward current - - 76 a v sd drain to source diode forward voltage v gs = 0v, i sd = 19a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 19a di f /dt = 100a/ s (note 4) - 349 - ns q rr reverse recovery charge - 3.56 - c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 3mh, i as = 19a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 19a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 40 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.03 45678 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 50 0 1020304050 0.15 0.20 0.25 0.30 0.35 0.40 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.2 0.6 1.0 1 10 1.2 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 80 0.1 1 10 0 500 1000 1500 2000 2500 3000 3500 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 5 10 15 20 25 30 35 0 2 4 6 8 10 *note: i d = 19a v ds = 100v v ds = 200v v ds = 320v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area - fdp19n40 figure 11. transient thermal response curve - fdp19n40 -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -75 -25 25 75 125 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 9.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 200 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 800 dc 25 50 75 100 125 150 0 4 8 12 16 20 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 0.003 t 1 p dm t 2
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 7 mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 8 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 dimensions in millimeters
fdp19n40 / fdpf19n4 0 n-channel mosfet fdp19n40 / FDPF19N40 rev. a www.fairchildsemi.com 9 rev. i37 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life supp ort device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? 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